MAGNETIC MEMORY DEVICE

摘要

A magnetic memory device comprising an annular magnetic layer arranged at the intersections of lines (5a, 5b) and a write word line (6) connected through a switch (S), wherein the write lines (5, 6) penetrate the annular magnetic layer at a parallel part (10), and a memory cell (1) comprises two annular magnetic layers arranged at the intersections of the lines (5a, 5b) and the write word line (6) and two magnetoresistive effect exhibiting bodies (20a, 20b). According to the arrangement, number of current supply lines can be decreased and scaling-down of a magnetic memory device can be realized.