发明名称 |
SEMICONDUCTOR LASER DEVICE AND LASER PROJECTOR |
摘要 |
<p>A semiconductor laser device (10) having different end face reflectances. The semiconductor laser device (10) has an electrode of a four-split structure composed of four electrode portions (1, 2, 3, 4) arranged on a striped ridge portion (107a). A larger injected current is injected into the electrode nearer the light-emitting end face. In such a semiconductor laser device, the carrier density distribution in the active layer opposed to the striped ridge portion can be suitable for the light intensity distribution, and consequently the instability of the transverse mode caused by spatial hole burning and the degradation of the high-output characteristic due to lowering of the gain can be prevented.</p> |
申请公布号 |
WO2005062433(A1) |
申请公布日期 |
2005.07.07 |
申请号 |
WO2004JP19123 |
申请日期 |
2004.12.21 |
申请人 |
MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD.;MIZUUCHI, KIMINORI;YAMAMOTO, KAZUHISA;KASAZUMI, KEN'ICHI;KIDOGUCHI, ISAO |
发明人 |
MIZUUCHI, KIMINORI;YAMAMOTO, KAZUHISA;KASAZUMI, KEN'ICHI;KIDOGUCHI, ISAO |
分类号 |
H01S5/042;H01S5/062;H01S5/0625;H01S5/10;H01S5/22;(IPC1-7):H01S5/062 |
主分类号 |
H01S5/042 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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