| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a method for manufacturing a three-dimensional structure for suppressing occurrence of operation failure, having a high degree of freedom of structural and process design in design and working of the structure. <P>SOLUTION: The method for manufacturing semiconductor structure comprises a first patterning process for forming a projecting part by selectively removing a first substrate from a first main surface of the first substrate, a substrate joining process for joining the first main surface to the main surface of a second substrate, and a back face etching process for leaving only the projecting part by uniformly removing the first substrate from the second main surface opposed to the first main surface. <P>COPYRIGHT: (C)2005,JPO&NCIPI |
