| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device which can stabilize device operation by preventing shut-off state of a base current path due to contact between a depletion layer from a collector layer which disables operation in the lateral bipolar transistor of the SOI structure and a depletion layer from the area above an insulating film. SOLUTION: The lateral bipolar transistor utilizing the SOI and trench technologies is constituted by including two semiconductor layers with another insulating film provided in the semiconductor layer of a transistor forming region on the insulating film and forming this insulating film under a collector layer. With the structure explained above, the lateral bipolar transistor can be operated under the conditions that diffusion of the depletion layer from the collector layer can be suppressed with the insulating film in the semiconductor layer, the base current path under the collector layer is not shut off even when the base region is operated under a high voltage state, and a base current feeding path can always be attained on the insulating film on the semiconductor substrate. COPYRIGHT: (C)2005,JPO&NCIPI
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