发明名称 |
Method of manufacturing thin film transistor, method of manufacturing flat panel display, thin film transistor, and flat panel display |
摘要 |
A method of manufacturing a thin film transistor and a method of manufacturing a flat panel display without increasing the number of heat treatment steps, and a thin film transistor and a flat panel display obtained by such methods are disclosed. A semiconductor region having an island shape is formed on an insulating substrate. A gate electrode is formed above the semiconductor region with a gate dielectric film being located therebetween. An impurity is implanted to the semiconductor region using the gate electrode as a mask, thereby forming source and drain regions in a self-aligned manner at both sides of a channel region. An interlayer dielectric film is formed on the gate electrode and the gate dielectric film. Thereafter, a step of activating the impurity and a step of burning the interlayer dielectric film are simultaneously performed in a single heat treatment step.
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申请公布号 |
US2005148119(A1) |
申请公布日期 |
2005.07.07 |
申请号 |
US20050028650 |
申请日期 |
2005.01.05 |
申请人 |
KABUSHIKI KAISHA TOSHIBA |
发明人 |
FUJIMURA TAKASHI |
分类号 |
H01L21/20;G02F1/136;H01L21/336;H01L29/786;(IPC1-7):H01L29/04;H01L29/10;H01L31/036;H01L31/037;H01L31/20;H01L27/108;H01L29/76;H01L29/94;H01L31/119 |
主分类号 |
H01L21/20 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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