发明名称 |
Method of making strained channel CMOS transistors having lattice-mismatched epitaxial |
摘要 |
A method is provided in which an n-type field effect transistor (NFET) and a p-type field effect transistor (PFET) each have a channel region disposed in a first single-crystal semiconductor region having a first composition. A stress is applied at a first magnitude to a channel region of the PFET but not at that magnitude to the channel region of the NFET. The stress is applied by a single-crystal semiconductor layer having a second composition such that the single-crystal semiconductor layer is lattice-mismatched to the first region. The semiconductor layer is formed over the source and drain regions and optionally over the extension regions of the PFET at a first distance from the channel region of the PFET and is formed over the source and drain regions of the NFET at a second, greater distance from the channel region of the NFET, or the semiconductor layer having the second composition is not formed at all in the NFET.
|
申请公布号 |
US2005148133(A1) |
申请公布日期 |
2005.07.07 |
申请号 |
US20050052675 |
申请日期 |
2005.02.07 |
申请人 |
CHEN HUAJE;CHIDAMBARRAO DURESETI;DOKUMACI OMER O.;YANG HAINING S. |
发明人 |
CHEN HUAJE;CHIDAMBARRAO DURESETI;DOKUMACI OMER O.;YANG HAINING S. |
分类号 |
H01L21/265;H01L21/336;H01L21/8238;H01L29/78;(IPC1-7):H01L21/823;H01L29/00 |
主分类号 |
H01L21/265 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|