| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a material, in which thermal conductivity is 500 W/(m K) or higher and is higher than that of AlN or SiC sintered body, and coefficient of thermal expansion is 3.0 to 6.5×10<SP>-6</SP>/K and which is close to that of semiconductor devices, such as InP and GaAs. <P>SOLUTION: A high thermal conductivity diamond sintered body is provided, wherein it does not contain in the inside, diamond particles, in which peak of particle size distribution is 5 μm or larger and 100 μm or smaller, are contained 60 vol.% or higher and 90 vol.% or lower with respect to the whole sintered body; the remaining portion substantially consists of cooper, at least a plurality of diamond particles which constitute the sintered body are directly coupled to each other; cooper which constitutes the sintered body is not oxidized substantially; and the amount of oxygen in the sintered body is 0.025 weight% or lower. A diamond heat sink for mounting a semiconductor is provided, wherein the sintered body in which surface treatment is carried out is used as a base material and at least two faces per pair of surfaces or more, which face each other, are covered with a metal film. <P>COPYRIGHT: (C)2005,JPO&NCIPI |
