发明名称 METHOD FOR MANUFACTURING SILICON THIN FILM SOLAR BATTERY
摘要 <p><P>PROBLEM TO BE SOLVED: To provide a method for manufacturing a solar battery with a high output by uniformly forming a thin film including an i-type crystal silicon layer on a substrate whose area is large. <P>SOLUTION: This method for manufacturing a silicon thin film solar battery is provided to form a silicon thin film configured by interposing an i-layer between a p-layer and an n-layer on a substrate by a high frequency plasma CVD method. This i-layer is constituted of a micro or poly-crsytalline silicon, and the i-layer is formed of plasma by a pulse-modulated high frequency power, and one cycle of the pulse modulation is constituted of an ON state in which a high frequency power is outputted and an OFF state in which the high frequency power is not outputted, and when ON state time/(ON state time+OFF state time) is an ON state time rate, the ON state time rate in the initial process of i-layer formation is smaller than the ON state time rate in any process posterior to the initial process of the i-layer formation. <P>COPYRIGHT: (C)2005,JPO&NCIPI</p>
申请公布号 JP2005183620(A) 申请公布日期 2005.07.07
申请号 JP20030421313 申请日期 2003.12.18
申请人 SHARP CORP 发明人 FUJIOKA YASUSHI;NOMOTO KATSUHIKO;SHIMIZU AKIRA
分类号 H01L31/04;(IPC1-7):H01L31/04 主分类号 H01L31/04
代理机构 代理人
主权项
地址
您可能感兴趣的专利