| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To provide a blank for a halftone type phase shift mask, capable of providing a blank improving the size precision of a pattern of a halftone film much higher than before, using a halftone blank structure provided with no light shielding film, and to provide a method for manufacturing the halftone type phase shift mask. <P>SOLUTION: In the blank for the halftone type phase shift mask formed by laminating the halftone film on a transparent substrate 1, a thin-film conductive layer 3 is formed on the halftone film 2. <P>COPYRIGHT: (C)2005,JPO&NCIPI</p> |
