发明名称 PLASMA FILM DEPOSITION DEVICE
摘要 PROBLEM TO BE SOLVED: To suppress the outflow of gas from the end parts of the face confronted with a base material in a plasma film deposition device where a first gas which comprises a film raw material and a second gas which does not comprise the same and made into plasma are blown off, and thereafter, they are mixed. SOLUTION: In the plasma film deposition device M1, a first gas which comprises the raw material for a film and a second gas which does not comprise the same are made separate. The first gas is blown off from a blow-off port 23a through a first passage. The second gas is passed through a second passage formed between an electric field application electrode 31 and a grounding electrode so as to be made into plasma, and is blown off from a blow-off port 23b. Straightening projecting parts 23d are projectingly formed at the lower side of a base material confronted member, i.e., the end parts in the face confronted with the base material in the device M1. Each straightening projecting part 23d elongates along so as to be parallel to the above end part. COPYRIGHT: (C)2005,JPO&NCIPI
申请公布号 JP2005179728(A) 申请公布日期 2005.07.07
申请号 JP20030421441 申请日期 2003.12.18
申请人 SEKISUI CHEM CO LTD 发明人 KAWASAKI SHINICHI
分类号 C23C16/455;C23C16/515;H01L21/31;(IPC1-7):C23C16/455 主分类号 C23C16/455
代理机构 代理人
主权项
地址