发明名称 Verfahren zum Herstellen einer Phasenschiebemaske
摘要 The phase shift mask and a method for fabricating the phase shift mask of the present invention improve a light intensity in a densely packed pattern. The phase shift mask has a light shielding layer with a plurality of light transmissive regions formed therein, including an etch stopper layer with first light transmissive patterns and second light transmissive patterns formed alternately thereon. Each of the first light transmissive patterns has one of the light transmissive regions and a first phase shift layer formed between the rims of one of the light transmissive regions, and each of the second light transmissive patterns has a second phase shift layer formed on a central part of another one of the light transmissive regions.
申请公布号 DE19727261(B4) 申请公布日期 2005.07.07
申请号 DE1997127261 申请日期 1997.06.26
申请人 LG SEMICON CO. LTD., CHEONGJU 发明人 LEE, JUN-SEOK
分类号 G03F1/08;G03F1/00;G03F1/14;G03F1/30;G03F1/48;G03F1/68;H01L21/027;(IPC1-7):G03F1/14 主分类号 G03F1/08
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