| 摘要 |
PROBLEM TO BE SOLVED: To provide a fast diode which has a fast and soft reverse recovery characteristic, a reverse-blocking characteristic of high pressure and little reverse direction leakage current, and a low VF characteristic, and which can inexpensively be manufactured by the manufacturing process of simple planar technique. SOLUTION: An excellent ON/OFF characteristic is obtained by an n-type intermediate concentration layer 3 (n<SB>1</SB>layer), SPEED (Soft Adapting P-Emittor Efficiency Diode) structures 5, 6 and the introduction of a life time killer by electronic beam irradiation. Thus, pressure resistance keeping structure by a multiple guard ring is formed with the forming process of a p<SP>-</SP>-type active area 5. As the conditions of the multiple guard ring, di<d(i+1) (however, i=1 to (m-1)) and gi=g(i+1)<gm (however, i=1 to (m-2)) are given. A field plate (a part on the oxide film 8 of a field plate electrode 10 and a part on the oxide film 8 of an anode electrode 9) is formed. The n<SB>1</SB>layer 3 having impurity concentration distribution in the state of a slope is formed. COPYRIGHT: (C)2005,JPO&NCIPI
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