发明名称 SEMICONDUCTOR WAFER AND DICING METHOD
摘要 PROBLEM TO BE SOLVED: To enhance a yield by suppressing an exfoliation or the like of an accessary pattern 53 at the time of dicing. SOLUTION: A semiconductor wafer before a dicing comprises a silicon substrate 50 with its surface divided into a element forming region 42 and a scribing line region 43, with a passivation film 55 and a polyimide film 56 covering the element forming region 42, and with the accessary pattern 53 comprising a top layer interconnection layer 52 exposing to the scribing line region 43. And the passivation film 55 and the polyimide film 56 covers a part of the accessary pattern 53. COPYRIGHT: (C)2005,JPO&NCIPI
申请公布号 JP2005183866(A) 申请公布日期 2005.07.07
申请号 JP20030426160 申请日期 2003.12.24
申请人 ELPIDA MEMORY INC 发明人 ANDO MASATERU
分类号 H01L21/312;H01L23/544;(IPC1-7):H01L21/312 主分类号 H01L21/312
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