发明名称 |
Damascene interconnect structures |
摘要 |
A method for making a semiconductor device is provided including providing a substrate, and forming a dielectric layer over the substrate. The method also includes defining a damascene interconnect structure in the dielectric layer and forming a barrier layer over the dielectric layer and within the damascene interconnect structure where the barrier layer is tapered within the damascene interconnect structure.
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申请公布号 |
US2005146048(A1) |
申请公布日期 |
2005.07.07 |
申请号 |
US20030748359 |
申请日期 |
2003.12.30 |
申请人 |
DUBIN VALERY M.;MOON PETER K.;O'BRIEN KEVIN P. |
发明人 |
DUBIN VALERY M.;MOON PETER K.;O'BRIEN KEVIN P. |
分类号 |
H01L21/768;H01L23/48;(IPC1-7):H01L23/48 |
主分类号 |
H01L21/768 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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