发明名称 Damascene interconnect structures
摘要 A method for making a semiconductor device is provided including providing a substrate, and forming a dielectric layer over the substrate. The method also includes defining a damascene interconnect structure in the dielectric layer and forming a barrier layer over the dielectric layer and within the damascene interconnect structure where the barrier layer is tapered within the damascene interconnect structure.
申请公布号 US2005146048(A1) 申请公布日期 2005.07.07
申请号 US20030748359 申请日期 2003.12.30
申请人 DUBIN VALERY M.;MOON PETER K.;O'BRIEN KEVIN P. 发明人 DUBIN VALERY M.;MOON PETER K.;O'BRIEN KEVIN P.
分类号 H01L21/768;H01L23/48;(IPC1-7):H01L23/48 主分类号 H01L21/768
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