| 摘要 |
A mask capable of improving superimposing accuracy of patterns drawn on a plurality of masks, a production method of a semiconductor device capable of improving a yield of semiconductor devices, and a semiconductor device wherein a pattern can be made finer are provided. A mask including a plurality of mask regions formed with mutually different mask patterns to be transferred to the same device, wherein all the mask patterns are drawn by the same electron beam exposure means; the mask pattern of each mask is drawn with being divided to a plurality of deflection regions; the deflection region is in a range wherein a part of the mask pattern can be drawn on the mask by deflecting an electron beam by fixing the electron beam exposure means; and the deflection region is divided, so that the mask pattern in any deflection region of each of the masks is transferred on the same region on the device as a mask pattern in one deflection region of other mask, a production method of a semiconductor device using the mask and a semiconductor device produced using the mask.
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