发明名称 Semiconductor device with components embedded in backside diamond layer
摘要 A semiconductor substrate with integrated circuit devices on its front side and a high thermal conductivity layer such as diamond on its back side, with components such as capacitors embedded in the high thermal conductivity layer and coupled to the front side integrated circuits with vias through the substrate.
申请公布号 US6913999(B2) 申请公布日期 2005.07.05
申请号 US20030670025 申请日期 2003.09.24
申请人 INTEL CORPORATION 发明人 SEARLS DAMION T.;DUJARI PRATEEK J.;LIAN BIN
分类号 H01L21/02;H01L21/04;H01L21/768;H01L23/373;H01L23/48;(IPC1-7):H01L21/44 主分类号 H01L21/02
代理机构 代理人
主权项
地址