发明名称 |
HDP process for high aspect ratio gap filling |
摘要 |
An HDP process for high aspect ratio gap filling comprises contacting a semiconductor substrate with an oxide precursor under high density plasma conditions at a first pressure less than about 10 millitorr, wherein said gaps are partially filled with oxide; and further contacting the substrate with an oxide precursor under high density plasma conditions at a second pressure greater than about 10 millitorr, wherein said gaps are further filled with oxide.
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申请公布号 |
US6914015(B2) |
申请公布日期 |
2005.07.05 |
申请号 |
US20030605857 |
申请日期 |
2003.10.31 |
申请人 |
INTERNATIONAL BUSINESS MACHINES CORPORATION |
发明人 |
BELYANSKY MICHAEL P.;ARGANDONA PATRICIA;DIBELLO GREGORY;KNORR ANDREAS;YANG DAEWON |
分类号 |
H01L21/314;H01L21/316;H01L21/318;H01L21/762;H01L21/8242;(IPC1-7):H01L21/31 |
主分类号 |
H01L21/314 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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