| 摘要 |
A field effect transistor in sandwiched configuration having organic semiconductor, comprising: a substrate ( 1 ), a gate electrode ( 2 ) formed on the surface of the substrate ( 1 ), a gate insulation layer ( 3 ) formed on the substrate ( 1 ) and the gate insulation layer ( 2 ), which is characterized in that, further comprising: an active layer ( 4 ) formed on the gate insulation layer ( 3 ) but leaving a part of the gate insulation layer ( 3 ) to be exposed, a source and drain electrodes ( 5 ) formed on a part of the gate insulation layer ( 3 ) and a part of the active layer ( 4 ), and an active layer ( 6 ) formed on the exposed part of the gate insulation layer ( 3 ), the active layer ( 4 ), the source electrode and the drain electrode ( 5 ). Taking full advantage of that the organic semiconductor can be processed under low temperature, the present invention adopts two or more kinds of materials to form the active semiconductor layer to make the active layer good contact with the source/drain electrode more effectively and reduce the threshold voltage of the device, and contact the semiconductor with the source/drain electrode and the insulation layer closely and tightly.
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