NON-VOLATILE SEMICONDUCTOR MEMORY DEVICE USING DIFFERENTIAL START PROGRAM VOLTAGE AND PROGRAM METHOD THEREFORE,申请号KR20030100108-传众专利搜索

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发明名称	NON-VOLATILE SEMICONDUCTOR MEMORY DEVICE USING DIFFERENTIAL START PROGRAM VOLTAGE AND PROGRAM METHOD THEREFORE
摘要
申请公布号	KR20050068554(A)	申请公布日期	2005.07.05
申请号	KR20030100108	申请日期	2003.12.30
申请人	SAMSUNG ELECTRONICS CO., LTD.	发明人	LEE, KYEONG HAN;LEE, JUNE
分类号	G11C16/02;G11C11/34;G11C16/00;G11C16/04;G11C16/06;G11C16/10;(IPC1-7):G11C16/02	主分类号	G11C16/02
代理机构		代理人
主权项
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