Method for fabricating self-aligned contact connections on buried bit lines

摘要

Word lines of a semiconductor component are provided with an encapsulation of dielectric material, Spacers of oxide extend alongside at the sidewalls of the word lines. The spacers are subsequently covered together with the word lines with a nitride layer. Borophosporosilicate glass is introduced between those portions of the nitride layer which respectively belong to a word line and is removed selectively with respect to the nitride using a mask. Contact hole fillings for the electrical connection of the buried bit lines are introduced into the contact holes thus formed.