| 摘要 |
A peeling layer ( 13 ) and semiconductor thin film ( 20 a) are formed on a first substrate ( 11 ), individual support materials ( 19 ) are formed thereupon, grooves ( 23 ) penetrating the semiconductor thin film and reaching the peeling layer ( 13 ) are formed in the semiconductor thin film ( 20 a) by etching using the individual support materials ( 19 ) as a mask so as to divide the semiconductor thin film ( 20 a) into a plurality of semiconductor thin film pieces ( 20 ) and form a plurality of assemblies of the semiconductor thin film pieces ( 20 ) and the individual support materials ( 19 ) fixed thereto, the semiconductor thin film pieces ( 20 ) are separated from the first substrate ( 11 ) while the individual support materials ( 19 ) remain fixed to the semiconductor thin film pieces ( 20 ), and they are then affixed to a second substrate ( 31 ). The invention facilitates handling of semiconductor thin film pieces.
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