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发明名称
改变薄膜之蚀刻选择性之方法
摘要
一种图案化结晶薄膜之方法。在一第一区域及一第二区域内提供一具有一包括第一原子之退化晶格(degenerate lattice)之结晶薄膜。掺杂物取代该第一区域中之该等第一原子,以在该第一区域内形成一非退化结晶薄膜。将该第一区域及该第二区域曝露至一湿蚀刻剂,其中该湿蚀刻剂蚀刻该第二区域内之退化晶格而不蚀刻该第一区域内之非退化晶格。
申请公布号
TW200522181
申请公布日期
2005.07.01
申请号
TW093124988
申请日期
2004.08.19
申请人
英特尔公司
发明人
贾斯汀K 布雷斯克
分类号
H01L21/302
主分类号
H01L21/302
代理机构
代理人
陈长文
主权项
地址
美国
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