发明名称 |
PROCEDE DE FABRICATION DE FILM POLYMERE CONDUCTEUR ANISOTROPE SUR TRANCHE DE SEMI-CONDUCTEUR |
摘要 |
A method of manufacturing an anisotropic conductive polymer film on a semiconductor wafer including on one surface a layer of passivation in which at least one opening is made to allow access to a contact pad. The method can be applied to creating components (chips, integrated circuits) with high-density interconnections. |
申请公布号 |
FR2842943(B1) |
申请公布日期 |
2005.07.01 |
申请号 |
FR20020009378 |
申请日期 |
2002.07.24 |
申请人 |
COMMISSARIAT A L'ENERGIE ATOMIQUE |
发明人 |
SOURIAU JEAN CHARLES;RENARD PIERRE;BRUN JEAN |
分类号 |
H01L21/288;H01L21/60;H01L21/68;H01L21/768;H01L23/485;H01L23/532 |
主分类号 |
H01L21/288 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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