发明名称 PROCEDE DE FABRICATION DE FILM POLYMERE CONDUCTEUR ANISOTROPE SUR TRANCHE DE SEMI-CONDUCTEUR
摘要 A method of manufacturing an anisotropic conductive polymer film on a semiconductor wafer including on one surface a layer of passivation in which at least one opening is made to allow access to a contact pad. The method can be applied to creating components (chips, integrated circuits) with high-density interconnections.
申请公布号 FR2842943(B1) 申请公布日期 2005.07.01
申请号 FR20020009378 申请日期 2002.07.24
申请人 COMMISSARIAT A L'ENERGIE ATOMIQUE 发明人 SOURIAU JEAN CHARLES;RENARD PIERRE;BRUN JEAN
分类号 H01L21/288;H01L21/60;H01L21/68;H01L21/768;H01L23/485;H01L23/532 主分类号 H01L21/288
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