| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device in which a short channel effect is suppressed without increasing a parasitic capacity or an element size, and also to provide a method of manufacturing the same. SOLUTION: In the semiconductor device, a silicon oxide film 5 containing an impurity (cesium) as the fixed charge is provided on a region interposed at a channel region under a gate electrode 4 formed on a p-type silicon substrate 1 through a gate insulating film 3, a source region 9, and a drain region 10. Regions 7, 7 containing the fixed charge of the silicon oxide film 5 become positive fixed charge. An inversion layer is formed directly under the regions 7, 7 containing the fixed charge, and functioned as an extremely shallow source-drain extension. COPYRIGHT: (C)2005,JPO&NCIPI
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