发明名称 |
Semiconductor device method for manufacturing the same, apparatus for forming film, and method for forming high-dielectric-constant film |
摘要 |
A semiconductor device having a gate electrode on a silicon substrate via a gate insulating film is formed by laminating the gate insulating film with a silicon oxide film, formed on the silicon substrate, an Hf silicate film is formed on the silicon oxide film, and a nitrogen-containing Hf silicate film formed on the Hf silicate film, and containing Hf in a peak concentration in a range from one atomic % to thirty atomic %, and nitrogen in a peak concentration in a range from ten atomic % to thirty atomic %.
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申请公布号 |
US2005139937(A1) |
申请公布日期 |
2005.06.30 |
申请号 |
US20040811979 |
申请日期 |
2004.03.30 |
申请人 |
SEMICONDUCTOR LEADING EDGE TECHNOLOGIES, INC. |
发明人 |
KAMIYAMA SATOSHI;ARIKADO TSUNETOSHI |
分类号 |
H01L21/28;H01L21/314;H01L21/316;H01L29/51;H01L29/78;(IPC1-7):H01L29/76;H01L21/823 |
主分类号 |
H01L21/28 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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