| 摘要 |
After ion implantation, thermal ashing is conducted in a high oxygen concentration at a pressure of between about 100 to about 760 Torr at below 700°C to remove the resist. Since photoresist consists of Carbon (C), Hydrogen (H) and Oxygen (O), the products of reaction of the thermal oxidation of the photoresist include CO2 and H2O. Since the process includes a substantial amount of oxygen, the resist can be completely oxidized, thus leaving no residue or other contaminates to remain on the substrate. |
