发明名称 |
Methods of forming contact structures for memory cells using etch stop layers and related devices |
摘要 |
Methods of forming a cell of a NOR-type flash memory device are provided in which a first gate pattern having a first sidewall and a second gate pattern having a second sidewall that opposes the first sidewall are formed on a semiconductor substrate. A source/drain region is formed in the semiconductor substrate between the first and second gate patterns. An etch stop layer is formed on the first and second sidewalls that defines a gap region. A dielectric layer is formed in the gap region, and is then etched to form a contact hole. Finally, a conductive material is deposited in the contact hole.
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申请公布号 |
US2005140002(A1) |
申请公布日期 |
2005.06.30 |
申请号 |
US20040899226 |
申请日期 |
2004.07.26 |
申请人 |
SHIN HYUN-CHUL;PARK JEONG-HO;LEE JUNG-YOUNG;PARK KWANG-WON |
发明人 |
SHIN HYUN-CHUL;PARK JEONG-HO;LEE JUNG-YOUNG;PARK KWANG-WON |
分类号 |
H01L21/28;H01L21/60;H01L21/8242;H01L21/8247;H01L23/48;H01L27/115;H01L29/76;H01L31/062;(IPC1-7):H01L21/824 |
主分类号 |
H01L21/28 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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