| 发明名称 |
FULLY DEPLETED SILICON-ON-INSULATOR CMOS LOGIC |
| 摘要 |
<p>An extractor implanted region is used in a silicon-on-insulator CMOS memory device. The extractor region is reversed biased to remove minority carriers from the body region of partially depleted memory cells. This causes the body region to be fully depleted without the adverse floating body effects.</p> |
| 申请公布号 |
WO2005038932(A3) |
申请公布日期 |
2005.06.30 |
| 申请号 |
WO2004US32743 |
申请日期 |
2004.10.05 |
| 申请人 |
MICRON TECHNOLOGY, INC.;FORBES, LEONARD |
发明人 |
FORBES, LEONARD |
| 分类号 |
G11C16/04;H01L21/00;H01L21/28;H01L21/336;H01L29/76;H01L29/786;H01L29/792;(IPC1-7):H01L29/786 |
主分类号 |
G11C16/04 |
| 代理机构 |
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代理人 |
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| 主权项 |
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| 地址 |
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