| 摘要 |
PROBLEM TO BE SOLVED: To provide a low dislocation density nitride semiconductor substrate excellent in cleavability, and to provide a nitride semiconductor laser element capable of a single mode with the main laser beam FFP free of ripples. SOLUTION: In this nitride semiconductor substrate having a first main surface and a second main surface, the first main surface has a first region containing an n-type impurity and a second region containing an n-type impurity different from that in the first region. In the nitride semiconductor laser element comprising a nitride semiconductor substrate having a first main surface and a second main surface, a nitride semiconductor layer laminated on the first main surface, and a stripe-shape ridge waveguide provided in the nitride semiconductor layer, the first main surface has a first region containing an n-type impurity and a second region containing an n-type impurity different from that in the first region, and an optical waveguide is provided above at least one of the first region or the second region. COPYRIGHT: (C)2005,JPO&NCIPI
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