Method and apparatus for measuring dimensions of a pattern on a semiconductor device

摘要

An apparatus and method for measuring a dimension of a pattern on a semiconductor device are provided. The method may include at least overlapping a reference pattern with an actual pattern that may be formed on a substrate, comparing the actual pattern with the reference pattern to determine whether the actual pattern may be aligned with the reference pattern, moving the actual pattern or the reference pattern in accordance with the results of the comparison to align the actual pattern with the reference pattern, and measuring a dimension of the actual pattern.