MANUFACTURING METHOD OF THIN FILM SEMICONDUCTOR DEVICE

摘要

PROBLEM TO BE SOLVED: To provide the manufacturing method of a thin film transistor device by which an ion concentration in a silicon layer which becomes a cause for a variable factor of element characteristics of a thin film transistor is detected with sufficient precision to stabilize the characteristics. SOLUTION: In the manufacturing method, a high crystalline region with little defect is locally formed on a low crystalline silicon layer with much defects, and a probe is brought into contact with an inside of the high crystalline region to measure sheet resistance, then an ion implant dose is adjusted from the ion concentration thus obtained. COPYRIGHT: (C)2005,JPO&NCIPI