DRAM CELL AND METHOD FOR FABRICATING THE SAME,申请号KR20030097455-传众专利搜索

首页产品黄页商标征信

会员服务注册登录

法人/股东/高管

发明名称	DRAM CELL AND METHOD FOR FABRICATING THE SAME
摘要
申请公布号	KR20050066203(A)	申请公布日期	2005.06.30
申请号	KR20030097455	申请日期	2003.12.26
申请人	HYNIX SEMICONDUCTOR INC.	发明人	KIM, KYUNG DO
分类号	H01L27/108;(IPC1-7):H01L27/108	主分类号	H01L27/108
代理机构		代理人
主权项
地址

您可能感兴趣的专利

Liquid crystal display comprising a dielectric layer having a first opening surrounding a patterned structure and exposing a portion of a first pixel electrode and a second pixel electrode formed on the dielectric layer

Method and system for an integrated VSB/QAM/NTSC/OOB plug-and-play DTV receiver

Lock interaction with software to facilitate access to cash handling device functionality

Tracking system with user-definable private ID for improved privacy protection

Method for programming new sensor in a motor vehicle monitoring system

Semiconductor device

Deactivation of integrated circuits

BIST DDR memory interface circuit and method for testing the same

Method and apparatus for wafer level burn-in

Coordinate detecting device and method

Method for testing H-bridge

Method for measuring the amount of air in a fluid

Apparatus for detecting a state of operation of a power semiconductor device

Device for locking a power tool to a battery pack, and battery pack

Antenna for radio frequency identification tag

Power resistor module

All digital phase lock loop and method for controlling phase lock loop

Clockless return to state domino logic gate

Capacitor element and semiconductor device

Semiconductor light emitting device with transparent substrate and reflective slope