发明名称 Laser mask and crystallization method using the same
摘要 A laser mask includes a mask pattern with edges having inverted shapes to alleviate the effects of diffraction of laser beams to reduce overlap regions such that crystallization characteristics are improved. The laser mask includes a mask pattern that includes transmitting regions and a blocking region. The edges of the mask have shapes inverted to the shapes of the edges of a silicon thin film crystallized by the pattern.
申请公布号 US2005142453(A1) 申请公布日期 2005.06.30
申请号 US20040016782 申请日期 2004.12.21
申请人 SEO HYUN S.;JUNG YUN H.;KIM YOUNG J.;YOU JAESUNG 发明人 SEO HYUN S.;JUNG YUN H.;KIM YOUNG J.;YOU JAESUNG
分类号 G02F1/136;B23K26/06;G03F1/14;G03F9/00;H01L21/00;H01L21/20;H01L21/336;H01L21/77;H01L21/84;H01L29/786;(IPC1-7):G03F9/00 主分类号 G02F1/136
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