发明名称 |
Laser mask and crystallization method using the same |
摘要 |
A laser mask includes a mask pattern with edges having inverted shapes to alleviate the effects of diffraction of laser beams to reduce overlap regions such that crystallization characteristics are improved. The laser mask includes a mask pattern that includes transmitting regions and a blocking region. The edges of the mask have shapes inverted to the shapes of the edges of a silicon thin film crystallized by the pattern.
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申请公布号 |
US2005142453(A1) |
申请公布日期 |
2005.06.30 |
申请号 |
US20040016782 |
申请日期 |
2004.12.21 |
申请人 |
SEO HYUN S.;JUNG YUN H.;KIM YOUNG J.;YOU JAESUNG |
发明人 |
SEO HYUN S.;JUNG YUN H.;KIM YOUNG J.;YOU JAESUNG |
分类号 |
G02F1/136;B23K26/06;G03F1/14;G03F9/00;H01L21/00;H01L21/20;H01L21/336;H01L21/77;H01L21/84;H01L29/786;(IPC1-7):G03F9/00 |
主分类号 |
G02F1/136 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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