发明名称 |
Method of forming an isolated line pattern using photolithography |
摘要 |
A method of forming an isolated line on a wafer is disclosed. The disclosed method comprises preparing a first mask comprising an isolated line pattern and dummy patterns, the dummy patterns being positioned on either side of the isolated line pattern; forming an isolated line pattern and dummy patterns on a wafer by performing a first exposure process using the first mask; preparing a second mask comprising a second pattern, the second pattern being positioned so as to completely cover the isolated line pattern on the wafer; and removing the dummy patterns on the wafer by performing a second exposure process using the second mask.
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申请公布号 |
US2005142501(A1) |
申请公布日期 |
2005.06.30 |
申请号 |
US20040026883 |
申请日期 |
2004.12.30 |
申请人 |
DONGBUANAM SEMICONDUCTOR, INC. |
发明人 |
KIM HONG L. |
分类号 |
H01L21/027;G03F1/14;G03F7/00;G03F7/20;(IPC1-7):G03F7/00 |
主分类号 |
H01L21/027 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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