发明名称 LITHOGRAPHY SYSTEM, AND DEVICE MANUFACTURING METHOD
摘要 PROBLEM TO BE SOLVED: To provide a lithography system and a device manufacturing method in which a wafer chuck is thermally satisfactorily adjusted. SOLUTION: The lithography system is provided, comprising an illumination system for providing a radiation beam, and a support structure for supporting a pattern forming device. The pattern forming device functions to pattern a sectional face of the radiation beam. Also, the lithography system has a substrate table for holding a substrate, and a projection system for projecting a patterned beam on a target portion of the substrate. The lithography system further has a chuck for supporting a target object and a frame for supporting the chuck over other portion of the lithography system. The chuck is thermally separated from at least the frame. COPYRIGHT: (C)2005,JPO&NCIPI
申请公布号 JP2005175490(A) 申请公布日期 2005.06.30
申请号 JP20040356114 申请日期 2004.12.09
申请人 ASML NETHERLANDS BV 发明人 BOX WILHELMUS JOSEPHUS;GILLISEN NOUD JAN;OTTENS JOOST JEROEN
分类号 H01L21/683;G03F7/20;H01L21/027;(IPC1-7):H01L21/027;H01L21/68 主分类号 H01L21/683
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