| 摘要 |
PROBLEM TO BE SOLVED: To improve surface stability between an insulating film and semiconductor interface while exhibiting high mobility, and also to obtain high on/off ratio. SOLUTION: A gate electrode 2, a gate insulating film 3, a source electrode 5, a drain electrode 6 and an organic semiconductor film 7 are formed on a substrate 1, and a low dielectric constant layer 4 in which specific inductive capacity is 1.5 or more and 3.5 or less, is formed at an interface between the gate insulating film 3 in which specific inductive capacity is 4 or more, and the organic semiconductor layer 7. COPYRIGHT: (C)2005,JPO&NCIPI
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