| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To provide a method of forming magnetic memory cells, in which magnetic influence from the ambience is reduced, and magnetic information can be read stably. <P>SOLUTION: The method includes a stage of forming a MTJ element 20A comprising a magnetization free layer 25 covered with a cap layer 30 and a protective layer 50 on an electrode layer 10, a stage of forming a first insulating layer 41 so as to cover the whole, a stage of performing flattening treatment over the entire surface so that one portion (residual portion 52) in a thickness direction of the protective layer 50 is left, a stage of removing the residual portion 52 entirely so that the upper surface of the cap layer 30 may be exposed, a step of forming a bit line 60 so that the upper surface 30S of the cap layer 30 may be covered, and a step of filling the periphery of the bit line 60, and forming a second insulating layer 42 so that a flat surface F1 contiguous to the upper surface of the bit line 60 may be constituted. Therefore, the distance of the thickness direction of the magnetization free layer 25 and a first current line 60 can be uniform and precise over the whole based on the thickness of the cap layer 30. <P>COPYRIGHT: (C)2005,JPO&NCIPI</p> |
