| 摘要 |
PROBLEM TO BE SOLVED: To overcome the problem in a pollutive impurity analysis method for a semiconductor or for a thin film formed on a semiconductor in which impurities are so far dissolved by hydrofluoric acid, etc. for solution analysis, wherein impurities exist which are gasified as compounds in analysis and therefore these impurities noticeably lower analysis accuracy. SOLUTION: According to this impurity analysis method, impurities in a semiconductor substrate and in a thin film formed thereon are sampled as gases, thereby making it possible to perform high accuracy analysis. COPYRIGHT: (C)2005,JPO&NCIPI
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