| 摘要 |
PROBLEM TO BE SOLVED: To provide a Y<SB>2</SB>O<SB>3</SB>sintered compact which is suitable for a plasma-resistant member such as an etcher for semiconductor production, excellent in plasma resistance and is dense, and has high lightness. SOLUTION: The Y<SB>2</SB>O<SB>3</SB>sintered compact suitable for a plasma-resistant member such as the etcher for semiconductor production, excellent in plasma resistance, is dense and having high lightness can be obtained by firing a formed body obtained by using a Y<SB>2</SB>O<SB>3</SB>raw material at 1,710-1,850°C in a hydrogen atmosphere. The Y<SB>2</SB>O<SB>3</SB>sintered compact has a density of≥4.85 g/cm<SP>3</SP>and lightness of≥N8.0 and contains MoO<SB>2</SB>in an amount of≤5 ppm. COPYRIGHT: (C)2005,JPO&NCIPI
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