| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device having three or more semiconductor chips in parallel wherein a difference in temperatures of the semiconductor chips is made small. SOLUTION: The semiconductor device is provided with five IGBT chips that are arranged in parallel. The IGBT chips 12B-12D arranged inside the parallel arrangement are made smaller in area than the IGBT chips 12A and 12E arranged on both ends of the parallel arrangement. As a result, when compared with a case when the IGBT chips 12A-12E are equal in area to each other, a current flowing in the IGBT chips 12B-12D arranged inside becomes smaller, and a difference in temperatures of the IGBT chips 12A-12E is made small, and a temperature increase of the IGBT rising up to the highest temperature is reduced than heretofore. COPYRIGHT: (C)2005,JPO&NCIPI
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