| 摘要 |
PROBLEM TO BE SOLVED: To provide a method of manufacturing a semiconductor device which assures flatness of a polished surface. SOLUTION: The method of manufacturing the semiconductor device includes processes of: forming an insulating film 12; forming on the insulating film a groove pattern 13 including line patterns 14 as a plurality of insulating island patterns 14 which reach the height nearly equal to the height of the insulating layer 12 and are separated from each other, so that the line patterns 14 extend along the longitudinal direction of the groove pattern 13 and other line patterns exist on the side between two line patterns adjoining to each other in the longitudinal direction; filling the inside of the groove pattern 13 with a conductive layer 15 while forming the conductive layer 15 on the insulating layer and inside the groove pattern 13; and forming embedded wiring 16 composed of the conductive layer 15 inside the groove pattern 13 by chemically and mechanically polishing the conductive layer 15 until the insulating layer 12 is exposed. COPYRIGHT: (C)2005,JPO&NCIPI
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