METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE, AND MANUFACTURING EQUIPMENT OF SEMICONDUCTOR DEVICE

摘要

PROBLEM TO BE SOLVED: To provide a method for manufacturing a semiconductor device wherein a contact hole of high aspect ratio can be formed stably. SOLUTION: The method for manufacturing a semiconductor device contains a process which arranges a substrate on which a film was formed in a vacuum chamber, facing an electrode plate in which a plurality of gas-leading holes were formed; a process which introduces gas in the vacuum chamber through a plurality of the gas-leading holes formed in the electrode plate; and a process which impresses high frequency power to the electrode plate in order to generate plasma for performing plasma treatment of the film formed on the substrate. Distribution of diameters of a plurality of the gas-leading holes on a surface of the electrode plate is adjusted to distribution corresponding to distribution of plasma treatment property on the surface of the substrate, so that the plasma treatment property on the surface of the substrate becomes within a predetermined range. COPYRIGHT: (C)2005,JPO&NCIPI