Method of fabricating dual damascene interconnections of microelectronic device

摘要

A method of fabricating dual damascene interconnections is provided. A dual damascene region is formed in a hybrid dielectric layer (130) having a dielectric constant of 3.3 or less, and a carbon-free inorganic material (160) is used as a via filler during formation of a trench (190). The present invention improves electrical properties of dual damascene interconnections and minimizes defects.