发明名称 |
LVTSCR with compact design |
摘要 |
In an ESD protection device making use of a LVTSCR, at least one contacted drain and at least one emitter are formed, and are arranged laterally next to each other to be substantially equidistant from the gate of the LVTSCR, to improve holding voltage and decrease size. The ratio of emitter width to contacted drain width is adjusted to achieve the desired characteristics.
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申请公布号 |
US6911679(B1) |
申请公布日期 |
2005.06.28 |
申请号 |
US20030339202 |
申请日期 |
2003.01.09 |
申请人 |
NATIONAL SEMICONDUCTOR CORP. |
发明人 |
VASHCHENKO VLADISLAV;CONCANNON ANN;TER BEEK MARCEL;HOPPER PETER J. |
分类号 |
H01L27/02;H01L29/417;(IPC1-7):H01L29/417 |
主分类号 |
H01L27/02 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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