| 摘要 |
A memory device (such as an SRAM) using negative differential resistance (NDR) elements is disclosed. Body effect performances for NDR FETs (and other FETs) that may be used in such device are enhanced by floating a body of some/all the NDR FETs. Various embodiments using common or separate wells for such elements are illustrated to achieve superior body effect performance results, including a silicon-on-insulator (SOI) implementation. |
