发明名称 Nonlithographic method to produce self-aligned mask, articles produced by same and compositions for same
摘要 A method for forming a self aligned pattern on an existing pattern on a substrate comprising applying a coating of a solution containing a masking material in a carrier, the masking material having an affinity for portions of the existing pattern; and allowing at least a portion of the masking material to preferentially assemble to the portions of the existing pattern. The pattern may be comprised of a first set of regions of the substrate having a first atomic composition and a second set of regions of the substrate having a second atomic composition different from the first composition. The first set of regions may include one or more metal elements and the second set of regions may include a dielectric. The first and second regions may be treated to have different surface properties. Structures made in accordance with the method. Compositions useful for practicing the method.
申请公布号 US6911400(B2) 申请公布日期 2005.06.28
申请号 US20020287905 申请日期 2002.11.05
申请人 INTERNATIONAL BUSINESS MACHINES CORPORATION 发明人 COLBURN MATTHEW E;GATES STEPHEN M;HEDRICK JEFFREY C;HUANG ELBERT;NITTA SATYANARAYANA V;PURUSHOTHAMAN SAMPATH;SANKARAPANDIAN MUTHUMANICKAM
分类号 H01L21/027;B32B3/00;G03F7/00;G03F7/16;G03F7/26;H01L21/31;H01L21/3105;H01L21/469;(IPC1-7):H01L21/31 主分类号 H01L21/027
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