发明名称 |
Nonlithographic method to produce self-aligned mask, articles produced by same and compositions for same |
摘要 |
A method for forming a self aligned pattern on an existing pattern on a substrate comprising applying a coating of a solution containing a masking material in a carrier, the masking material having an affinity for portions of the existing pattern; and allowing at least a portion of the masking material to preferentially assemble to the portions of the existing pattern. The pattern may be comprised of a first set of regions of the substrate having a first atomic composition and a second set of regions of the substrate having a second atomic composition different from the first composition. The first set of regions may include one or more metal elements and the second set of regions may include a dielectric. The first and second regions may be treated to have different surface properties. Structures made in accordance with the method. Compositions useful for practicing the method.
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申请公布号 |
US6911400(B2) |
申请公布日期 |
2005.06.28 |
申请号 |
US20020287905 |
申请日期 |
2002.11.05 |
申请人 |
INTERNATIONAL BUSINESS MACHINES CORPORATION |
发明人 |
COLBURN MATTHEW E;GATES STEPHEN M;HEDRICK JEFFREY C;HUANG ELBERT;NITTA SATYANARAYANA V;PURUSHOTHAMAN SAMPATH;SANKARAPANDIAN MUTHUMANICKAM |
分类号 |
H01L21/027;B32B3/00;G03F7/00;G03F7/16;G03F7/26;H01L21/31;H01L21/3105;H01L21/469;(IPC1-7):H01L21/31 |
主分类号 |
H01L21/027 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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