| 摘要 |
In a bipolar double-poly transistor comprising a layer of base silicon ( 1 ') on a silicon substrate ( 2 '), a first layer of silicon dioxide ( 3 ') on the base silicon layer ( 1 '), an emitter window ( 4 ') extending through the first layer ( 3 ') of silicon dioxide and the base silicon layer ( 1 '), a second layer ( 5 ') of silicon dioxide in the emitter window ( 4 '), silicon nitride spacers ( 6 ') on the second layer ( 5 ') of silicon dioxide in the emitter window ( 4 '), and emitter silicon ( 9 ') in the emitter window ( 4 '), an isolating silicon nitride seal is provided to separate the base silicon ( 1 ') from the emitter silicon ( 9 ') to prevent short-circuiting between the base silicon ( 1 ') and the emitter silicon ( 9 ') in the transistor.
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