POLYCRYSTALLINE SILICONE THIN FILM TRANSISTOR CRYSTALLIZED BY HEAT TREATMENT USING LINEAR LAMP SCANNER AND METHOD OF MAKING FOR THE SAME, AND METHOD OF CRYSTALLIZING AMORPHOUS SILICONE LAYER USING THE SAME,申请号KR20030094528-传众专利搜索

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发明名称	POLYCRYSTALLINE SILICONE THIN FILM TRANSISTOR CRYSTALLIZED BY HEAT TREATMENT USING LINEAR LAMP SCANNER AND METHOD OF MAKING FOR THE SAME, AND METHOD OF CRYSTALLIZING AMORPHOUS SILICONE LAYER USING THE SAME
摘要
申请公布号	KR20050063166(A)	申请公布日期	2005.06.28
申请号	KR20030094528	申请日期	2003.12.22
申请人	NEO POLY INC.	发明人	JOO, SEUNG GI;LIM, HYUCK
分类号	G02F1/136;(IPC1-7):G02F1/136	主分类号	G02F1/136
代理机构		代理人
主权项
地址

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