发明名称 |
Active matrix display device and manufacturing method thereof |
摘要 |
A semiconductor device reduced in size is provided in which the surface area outside of a display portion required for IC chips to mounted is reduced in a semiconductor device having an active matrix display portion. Further, signal wiring connection defects that accompany IC chip mounting are reduced. By manufacturing TFTs on an opposing substrate in a reflecting active matrix semiconductor device, thus manufacturing a desired logic circuit, the logic circuit, conventionally mounted externally, is formed on the opposing substrate. Further, the semiconductor device is made high speed and high performance by using suitable TFT structures and electric power source voltages for pixels and driver circuits on a pixel substrate and for the logic circuit on the opposing substrate.
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申请公布号 |
US6911675(B2) |
申请公布日期 |
2005.06.28 |
申请号 |
US20020305980 |
申请日期 |
2002.11.29 |
申请人 |
SEMICONDUCTOR ENERGY LABORATORY CO., LTD. |
发明人 |
KATO KIYOSHI;OZAKI TADAFUMI;MUTAGUCHI KOHEI |
分类号 |
G02F1/1333;G02F1/1362;H01L21/77;H01L21/84;H01L27/06;H01L27/12;(IPC1-7):H01L21/00 |
主分类号 |
G02F1/1333 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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