| 发明名称 |
HYDROGEN FREE INTEGRATION OF HIGH-K GATE DIELECTRICS |
| 摘要 |
The present invention pertains to forming a transistor in the absence of hydrogen, or in the presence of a significantly reduced amount of hydrogen. In this manner, a high-k material can be utilized to form a gate dielectric layer in the transistor and facilitate device scaling while mitigating defects that can be introduced into the high-k material by the presence of hydrogen and/or hydrogen containing compounds.
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| 申请公布号 |
US2005136679(A1) |
申请公布日期 |
2005.06.23 |
| 申请号 |
US20030745449 |
申请日期 |
2003.12.22 |
| 申请人 |
COLOMBO LUIGI;CHAMBERS JAMES J.;VISOKAY MARK R. |
发明人 |
COLOMBO LUIGI;CHAMBERS JAMES J.;VISOKAY MARK R. |
| 分类号 |
H01L21/28;H01L21/311;H01L21/314;H01L21/316;H01L21/318;H01L21/336;H01L29/51;(IPC1-7):H01L21/302 |
主分类号 |
H01L21/28 |
| 代理机构 |
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